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TISP3072F3,TISP3082F3
LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR
OVERVOLTAGE PROTECTORS
TISP30xxF3 (LV) Overvoltage Protector Series
Ion-Implanted Breakdown Region
Precise and Stable Voltage
D Package (Top View)
Low Voltage Overshoot under Surge
T
1
8
G
DEVICE
‘3072F3
V DRM
V
58
V (BO)
V
72
NC
NC
R
2
3
4
7
6
5
G
G
G
‘3082F3
66
82
NC - No internal connection
Planar Passivated Junctions
Low Off-State Current <10 μ A
Device Symbol
Rated for International Surge Wave Shapes
T
R
Waveshape
2/10 μ s
8/20 μ s
10/160 μ s
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
I TSP
A
80
70
60
10/700 μ s
ITU-T K.20/21
FCC Part 68
50
G
SD3XAA
10/560 μ s
10/1000 μ s
FCC Part 68
GR-1089-CORE
45
35
Terminals T, R and G correspond to the
alternative line designators of A, B and C
.............................................. UL Recognized Component
Description
These low-voltage dual bidirectional thyristor protectors are
designed to protect ISDN applications against transients caused
by lightning strikes and a.c. power lines. Offered in two voltage
variants to meet battery and protection requirements, they are
guaranteed to suppress and withstand the listed international
lightning surges in both polarities. Transients are initially clipped
by breakdown clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The high crowbar
holding current helps prevent d.c. latchup as the current subsides.
These monolithic protection devices are fabricated in
ion-implanted planar structures to ensure precise and matched
breakover control and are virtually transparent to the system in
normal operation.
How To Order
Device
TISP30xxF3
Package
D, Small-outline
Carrier
Tape And Reeled
Order As
TISP30xxF3DR-S
Insert xx value corresponding to protection voltages of 72 and 82
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
MARCH 1994 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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相关代理商/技术参数
TISP3082F3DR-S 功能描述:硅对称二端开关元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3082F3P 功能描述:硅对称二端开关元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3082F3PS 制造商:Bourns Inc 功能描述:
TISP3082F3P-S 功能描述:硅对称二端开关元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3082F3SL 功能描述:硅对称二端开关元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3082F3SLS 制造商:Bourns Inc 功能描述:
TISP3082F3SL-S 功能描述:硅对称二端开关元件 Low Voltage Dual Bidirectional RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA
TISP3082L 功能描述:硅对称二端开关元件 RoHS:否 制造商:Bourns 转折电流 VBO:40 V 最大转折电流 IBO:800 mA 不重复通态电流: 额定重复关闭状态电压 VDRM:25 V 关闭状态漏泄电流（在 VDRM IDRM 下）: 保持电流（Ih 最大值）:50 mA 开启状态电压:5 V 关闭状态电容 CO:120 pF 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:DO-214AA